HXY MOSFET HC3D10120G
Manufacturer:
HXY MOSFET
Mfr. Part #:
HC3D10120G
Package:
TO-263
Customer #:
Description:
SiC Diode Independent 1200V Surface Mount TO-263
Datasheet:
HXY MOSFET HC3D10120G
Products Specifications
Manufacturer:
Package:
TO-263
Non-Repetitive Peak Forward Surge Current:
90A
Reverse Leakage Current (Ir):
100uA@1200V
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.4V@10A
Current - Rectified:
30A
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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