HXY MOSFET US1M
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
US1M
Package:
SMA
Customer #:
Key Attributes:
Diode 1kV 1A SMA
Description:
30A 75ns 1kV Independent 1.7V@1A 1A SMA Single Diodes RoHS
Datasheet:
HXY MOSFET US1M
Products Specifications
Manufacturer:
Package:
SMA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@1kV
Reverse Recovery Time (trr):
75ns
Voltage - DC Reverse (Vr) (Max):
1kV
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.