Huixin H10N65F
Manufacturer:
Huixin
Asian Brands
Mfr. Part #:
H10N65F
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET N-CH 650V 10A TO-220F
Description:
650V 10A 800mΩ@10V 4V 1 N-channel 32W TO-220F Single FETs, MOSFETs RoHS
Datasheet:
Huixin H10N65F
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
800mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.62nF
Output Capacitance(Coss):
140pF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
35nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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