HUAYI HYG023N03LR1D
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG023N03LR1D
Package:
TO-252-2L
Customer #:
Key Attributes:
MOSFET N-CH 30V 110A TO-252-2L
Description:
N-Channel 30V 110A 62.5W Surface Mount TO-252-2L
Datasheet:
HUAYI HYG023N03LR1D
Products Specifications
Manufacturer:
Package:
TO-252-2L
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
462pF
Number:
1 N-channel
Output Capacitance(Coss):
561pF
Input Capacitance(Ciss):
4.71nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
93nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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