HUASHUO HSCB20N06
Manufacturer:
HUASHUO
Asian Brands
Mfr. Part #:
HSCB20N06
Package:
DFN-6L(2x2)
Customer #:
Key Attributes:
MOSFET N-CH 60V 20A DFN-6L(2x2)
Description:
60V 20A 1.6V 1 N-channel 3W DFN-6L(2x2) Single FETs, MOSFETs RoHS
Datasheet:
HUASHUO HSCB20N06
Products Specifications
Manufacturer:
Package:
DFN-6L(2x2)
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
12mΩ@10V;16mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF
Number:
1 N-channel
Output Capacitance(Coss):
265pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
807pF
Gate Charge(Qg):
13nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUASHUO
618 Products
Huashuo Semiconductor Co., Ltd.
(hereinafter referred to as "HUASHUO") is a semiconductor device company focusing on independent research and development, sales and service. HUASHUO adheres to the principle of "developing new technologies, manufacturing new products, and creating new solutions." It has the design capabilities of a full range of medium/low voltage Power MOSFET discrete devices and special process ICs. The products are widely used in computers, automotive electronics, industrial electronics, consumer electronics, communication power supplies, lithium batteries and other new energy industries.
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