HUASHUO HSCB2903
Manufacturer:
HUASHUO
Asian Brands
Mfr. Part #:
HSCB2903
Package:
DFN-6L-EP(2x2)
Customer #:
Key Attributes:
MOSFET N-CH+P-CH ARR 20V 5A DFN-6L-EP(2x2)
Description:
N-Channel+P-Channel Array 20V 5A 1.6W Surface Mount DFN-6L-EP(2x2)
Datasheet:
HUASHUO HSCB2903
Products Specifications
Manufacturer:
Package:
DFN-6L-EP(2x2)
Drain to Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
73pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
82pF
Pd - Power Dissipation:
1.6W
Input Capacitance(Ciss):
677pF
Gate Charge(Qg):
10.1nC@4.5V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HUASHUO
618 Products
Huashuo Semiconductor Co., Ltd.
(hereinafter referred to as "HUASHUO") is a semiconductor device company focusing on independent research and development, sales and service. HUASHUO adheres to the principle of "developing new technologies, manufacturing new products, and creating new solutions." It has the design capabilities of a full range of medium/low voltage Power MOSFET discrete devices and special process ICs. The products are widely used in computers, automotive electronics, industrial electronics, consumer electronics, communication power supplies, lithium batteries and other new energy industries.
Recommended Products
HSBA0084A
100V 150A 2.7mΩ@10V 3V 1 N-channel 220W PRPAK-8(5x6) Single FETs, MOSFETs RoHS
Manufacturer: HUASHUO