HUASHUO HSCE1218
Manufacturer:
HUASHUO
Asian Brands
Mfr. Part #:
HSCE1218
Package:
DFN-8(3.3x3.3)
Customer #:
Key Attributes:
MOSFET P-CH 12V 60A DFN-8(3.3x3.3)
Description:
P-Channel 12V 60A 83W Surface Mount DFN-8(3.3x3.3)
Datasheet:
HUASHUO HSCE1218
Products Specifications
Manufacturer:
Package:
DFN-8(3.3x3.3)
Configuration:
-
Drain to Source Voltage:
12V
Current - Continuous Drain(Id):
60A
RDS(on):
5.6mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.13nF
Number:
1 P-Channel
Output Capacitance(Coss):
1.42nF
Input Capacitance(Ciss):
6.91nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
41nC@4.5V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUASHUO
618 Products
Huashuo Semiconductor Co., Ltd.
(hereinafter referred to as "HUASHUO") is a semiconductor device company focusing on independent research and development, sales and service. HUASHUO adheres to the principle of "developing new technologies, manufacturing new products, and creating new solutions." It has the design capabilities of a full range of medium/low voltage Power MOSFET discrete devices and special process ICs. The products are widely used in computers, automotive electronics, industrial electronics, consumer electronics, communication power supplies, lithium batteries and other new energy industries.
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