HUASHUO HSCE4117
Manufacturer:
HUASHUO
Asian Brands
Mfr. Part #:
HSCE4117
Package:
DFN-8(3.3x3.3)
Customer #:
Key Attributes:
MOSFET P-CH 40V 50A DFN-8(3.3x3.3)
Description:
40V 50A 8.2mΩ@10V 1.65V 1 P-Channel 52W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS
Datasheet:
HUASHUO HSCE4117
Products Specifications
Manufacturer:
Package:
DFN-8(3.3x3.3)
Drain to Source Voltage:
40V
Current - Continuous Drain(Id):
50A
RDS(on):
8.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.65V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
225pF
Number:
1 P-Channel
Pd - Power Dissipation:
52W
Input Capacitance(Ciss):
3.67nF
Output Capacitance(Coss):
313pF
Gate Charge(Qg):
59nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HUASHUO
618 Products
Huashuo Semiconductor Co., Ltd.
(hereinafter referred to as "HUASHUO") is a semiconductor device company focusing on independent research and development, sales and service. HUASHUO adheres to the principle of "developing new technologies, manufacturing new products, and creating new solutions." It has the design capabilities of a full range of medium/low voltage Power MOSFET discrete devices and special process ICs. The products are widely used in computers, automotive electronics, industrial electronics, consumer electronics, communication power supplies, lithium batteries and other new energy industries.
Recommended Products
HSCE3031
30V 50A 1.6V 1 P-Channel 52W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS
Manufacturer: HUASHUO