HUAKE HCD65R1K0
Manufacturer:
HUAKE
Asian Brands
Mfr. Part #:
HCD65R1K0
Package:
TO-252
Customer #:
Key Attributes:
MOSFET N-CH 650V 4A TO-252
Description:
N-Channel 650V 4A 61W Surface Mount TO-252
Datasheet:
HUAKE HCD65R1K0
Products Specifications
Manufacturer:
Package:
TO-252
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.2pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
330pF@25V
Pd - Power Dissipation:
61W
Gate Charge(Qg):
10.2nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAKE
77 Products
Shenzhen HUAKE Semiconductor Co., Ltd.
(hereinafter referred to as "HUAKE") was established in 2009. It is mainly engaged in the research and development and production of power MOS, Schottky, fast recovery, IGBT, GaN, SiC, bridge stack and other series of products. The products are widely used in power adapters, LED driver power supplies, chargers, new energy (photovoltaic, energy storage, charging piles) and other fields. HUAKE has strong technical strength and has a power semiconductor device engineering laboratory. In the production process, it is strictly managed in accordance with the requirements of the ISO9001 quality assurance system to ensure the quality and performance of the products. HUAKE is committed to providing the market with stable and high-quality products.
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