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Hangzhou Silan Microelectronics SVS11N65FJD2

Hangzhou Silan Microelectronics SVS11N65FJD2

Name: Hangzhou Silan Microelectronics SVS11N65FJD2
Brand: Hangzhou Silan Microelectronics

Manufacturer: Hangzhou Silan Microelectronics Asian Brands

Mfr. Part #: SVS11N65FJD2

Package: TO-220F-3

Customer #:

Key Attributes: MOSFET N-CH 650V 11A TO-220F-3

Description: N-Channel 650V 11A 35W Through Hole TO-220F-3

Datasheet: Hangzhou Silan Microelectronics SVS11N65FJD2

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

Hangzhou Silan Microelectronics

Package:

TO-220F-3

Drain to Source Voltage:

650V

Current - Continuous Drain(Id):

11A

Operating Temperature -:

-55℃~+150℃

RDS(on):

330mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

2.3pF

Number:

1 N-channel

Output Capacitance(Coss):

37pF

Input Capacitance(Ciss):

632pF

Pd - Power Dissipation:

35W

Gate Charge(Qg):

23nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	50
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

About Product

Hangzhou Silan Microelectronics SVS11N65FJD2

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Hangzhou Silan Microelectronics

293 Products

Asian Brand

Hangzhou Silan Microelectronics Co., Ltd. (Shanghai Stock Exchange: Silan Micro, 600460) is a high-tech enterprise specialized in the design of integrated circuit chips and the production of semiconductor microelectronics related products. It is located in Hangzhou High-tech Industrial Development Zone.

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