GOFORD 18N20F
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
18N20F
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET N-CH 200V 18A TO-220F
Description:
N-Channel 200V 18A 110W Through Hole TO-220F
Datasheet:
GOFORD 18N20F
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.81pF
Number:
1 N-channel
Output Capacitance(Coss):
73pF
Input Capacitance(Ciss):
836pF@25V
Pd - Power Dissipation:
110W
Gate Charge(Qg):
17.7nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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