GOFORD G110N06K-BQ
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G110N06K-BQ
Package:
TO-252
Customer #:
Key Attributes:
MOSFET N-CH 60V 110A TO-252
Description:
N-Channel 60V 110A 160W Surface Mount TO-252
Datasheet:
GOFORD G110N06K-BQ
Products Specifications
Manufacturer:
Package:
TO-252
Configuration:
-
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
306pF
Number:
1 N-channel
Output Capacitance(Coss):
334pF
Input Capacitance(Ciss):
6.469nF
Pd - Power Dissipation:
160W
Gate Charge(Qg):
122nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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