GOFORD G070N06T
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G070N06T
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 60V 110A TO-220
Description:
N-Channel 60V 110A 160W Through Hole TO-220
Datasheet:
GOFORD G070N06T
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
110A
RDS(on):
4.9mΩ@10V;6.4mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
333pF
Pd - Power Dissipation:
160W
Input Capacitance(Ciss):
6.1nF
Output Capacitance(Coss):
355pF
Gate Charge(Qg):
122nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
Recommended Products