GOFORD 18N20-252
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
18N20-252
Package:
TO-252
Customer #:
Key Attributes:
MOSFET N-CH 200V 18A TO-252
Description:
N-Channel 200V 18A 65.8W Surface Mount TO-252
Datasheet:
GOFORD 18N20-252
Products Specifications
Manufacturer:
Package:
TO-252
Drain to Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.81pF
Number:
1 N-channel
Output Capacitance(Coss):
81.2pF
Input Capacitance(Ciss):
836pF
Pd - Power Dissipation:
65.8W
Gate Charge(Qg):
18nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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