GOFORD GC085N65QF
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GC085N65QF
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 650V 40A TO-247
Description:
N-Channel 650V 40A 299W Through Hole TO-247
Datasheet:
GOFORD GC085N65QF
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
40A
RDS(on):
72mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.6V@250uA
Type:
N-Channel
Pd - Power Dissipation:
299W
Gate Charge(Qg):
76nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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