GOFORD G1NP02ELL
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G1NP02ELL
Package:
SOT-23-6
Customer #:
Key Attributes:
N and P Channel Enhancement Mode Power MOSFET
Description:
20V 550mV@250uA 1.12W SOT-23-6 Single FETs, MOSFETs RoHS
Datasheet:
GOFORD G1NP02ELL
Products Specifications
Manufacturer:
Package:
SOT-23-6
Drain to Source Voltage:
20V
Current - Continuous Drain(Id):
1.36A;1.15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
159mΩ@4.5V;375mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
550mV@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF;5.7pF
Number:
-
Output Capacitance(Coss):
15pF;17pF
Input Capacitance(Ciss):
60pF;68.4pF
Pd - Power Dissipation:
1.12W
Gate Charge(Qg):
750pC@4.5V;855pC@4.5V
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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