GOFORD G7K2N20HE
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G7K2N20HE
Package:
SOT-223
Customer #:
Key Attributes:
MOSFET N-CH 200V 2A SOT-223
Description:
N-Channel 200V 2A 1.8W Surface Mount SOT-223
Datasheet:
GOFORD G7K2N20HE
Products Specifications
Manufacturer:
Package:
SOT-223
Drain to Source Voltage:
200V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@100V
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
568pF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
10.8nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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