BORN BMF4N65
Manufacturer:
BORN
Asian Brands
Mfr. Part #:
BMF4N65
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET N-CH 650V 4A TO-220F
Description:
N-Channel 650V 4A 30W Through Hole TO-220F
Datasheet:
BORN BMF4N65
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
2.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
610pF@25V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
15nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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BORN
1857 Products
BORN Semiconductor (Shenzhen) Co., Ltd., abbreviated as BORN Semiconductor, was established in 2012 and is headquartered in Bao'an District, Shenzhen, China. The company focuses on the design, research, development, production, and sales of protection devices and power device wafers. Its main product lines include protection devices, power devices, driver ICs, and interface chips.
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