BORN BMF7N65
Manufacturer:
BORN
Asian Brands
Mfr. Part #:
BMF7N65
Package:
TO-220F
Customer #:
Key Attributes:
N-Channel MOSFET
Description:
650V 7A 1.21Ω@10V 4V@250uA 36W TO-220F Single FETs, MOSFETs RoHS
Datasheet:
BORN BMF7N65
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.21Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Input Capacitance(Ciss):
1.13nF
Pd - Power Dissipation:
36W
Output Capacitance(Coss):
92pF
Gate Charge(Qg):
23nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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BORN
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BORN Semiconductor (Shenzhen) Co., Ltd., abbreviated as BORN Semiconductor, was established in 2012 and is headquartered in Bao'an District, Shenzhen, China. The company focuses on the design, research, development, production, and sales of protection devices and power device wafers. Its main product lines include protection devices, power devices, driver ICs, and interface chips.
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