BORN BMF12N60G
Manufacturer:
BORN
Asian Brands
Mfr. Part #:
BMF12N60G
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET N-CH 600V 12A TO-220F
Description:
N-Channel 600V 12A 156W Through Hole TO-220F
Datasheet:
BORN BMF12N60G
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
156W
Input Capacitance(Ciss):
2.107nF
Gate Charge(Qg):
45nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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BORN
1857 Products
BORN Semiconductor (Shenzhen) Co., Ltd., abbreviated as BORN Semiconductor, was established in 2012 and is headquartered in Bao'an District, Shenzhen, China. The company focuses on the design, research, development, production, and sales of protection devices and power device wafers. Its main product lines include protection devices, power devices, driver ICs, and interface chips.
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