BORN BNESD7551N2T5G
Manufacturer:
BORN
Asian Brands
Mfr. Part #:
BNESD7551N2T5G
Package:
DFN1006-2
Customer #:
Key Attributes:
ESD DIODE 3.3VWM 20VC DFN1006-2
Description:
20VC Clamp 3.5A@8/20us Ipp ESD DIODE DFN1006-2
Datasheet:
BORN BNESD7551N2T5G
Products Specifications
Manufacturer:
Package:
DFN1006-2
Peak Pulse Current (Ipp):
3.5A@8/20us
Clamping Voltage:
20V
Peak Pulse Power Dissipation (Ppp):
60W@8/20us
Junction Capacitance:
0.3pF
Polarity:
Bidirectional
Reverse Stand-Off Voltage (Vrwm):
3.3V
Type:
ESD
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
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BORN
1857 Products
BORN Semiconductor (Shenzhen) Co., Ltd., abbreviated as BORN Semiconductor, was established in 2012 and is headquartered in Bao'an District, Shenzhen, China. The company focuses on the design, research, development, production, and sales of protection devices and power device wafers. Its main product lines include protection devices, power devices, driver ICs, and interface chips.
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