BLUE ROCKET BRCS120N06YB
Manufacturer:
BLUE ROCKET
Asian Brands
Mfr. Part #:
BRCS120N06YB
Package:
PDFN-8L(3x3)
Customer #:
Key Attributes:
N-Channel MOSFET, Current:24A, Voltage:60V
Description:
60V 24A 13mΩ@10V 2.5V@250uA 1 N-channel 24W PDFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet:
BLUE ROCKET BRCS120N06YB
Products Specifications
Manufacturer:
Package:
PDFN-8L(3x3)
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
1.01nF
Pd - Power Dissipation:
24W
Gate Charge(Qg):
13.5nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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BLUE ROCKET
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Foshan Blue Rocket Electronics Co., Ltd.
(hereinafter referred to as "BlueRocket" or "Foshan Blue Rocket Elec") is a professional R&D and manufacturing company of semiconductor devices in China. The company formerly Foshan Radio Factory 4, changed its shares to Foshan Blue Rocket Electronics Co., Ltd. in 2012, it has formed an annual production scale of 15 billion units and is one of the main semiconductor device production bases in South China. The company’s products include transistors, switches, voltage regulators, diodes, thyristors, and ICs, which are widely used in home appliances, power supplies, communications, and automotive electronics. The company passed certifications such as ISO9001 quality management system, ISO14001 environmental management system, and ISO/TS16949 (IATF16949) automotive industry quality management system standard. Additionally, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Gu
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