BLUE ROCKET BRCS7002K2ZK
Manufacturer:
BLUE ROCKET
Asian Brands
Mfr. Part #:
BRCS7002K2ZK
Package:
DFN1006-3L
Customer #:
Key Attributes:
MOSFET N-CH 60V 0.36A DFN1006-3L
Description:
N-Channel 60V 0.36A 0.36W Surface Mount DFN1006-3L
Datasheet:
BLUE ROCKET BRCS7002K2ZK
Products Specifications
Manufacturer:
Package:
DFN1006-3L
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
360mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9Ω@5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
25pF
Pd - Power Dissipation:
360mW
Gate Charge(Qg):
700pC@4.5V
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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BLUE ROCKET
913 Products
Foshan Blue Rocket Electronics Co., Ltd.
(hereinafter referred to as "BlueRocket" or "Foshan Blue Rocket Elec") is a professional R&D and manufacturing company of semiconductor devices in China. The company formerly Foshan Radio Factory 4, changed its shares to Foshan Blue Rocket Electronics Co., Ltd. in 2012, it has formed an annual production scale of 15 billion units and is one of the main semiconductor device production bases in South China. The company’s products include transistors, switches, voltage regulators, diodes, thyristors, and ICs, which are widely used in home appliances, power supplies, communications, and automotive electronics. The company passed certifications such as ISO9001 quality management system, ISO14001 environmental management system, and ISO/TS16949 (IATF16949) automotive industry quality management system standard. Additionally, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Gu
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