Bestirpower BCZ120N21M1
Manufacturer:
Bestirpower
Asian Brands
Mfr. Part #:
BCZ120N21M1
Package:
TO-247-4
Customer #:
Key Attributes:
BCZ120N21M1 N-channel Silicon Carbide Power MOSFET
Description:
N-Channel 1.2kV 100A 469W Through Hole TO-247-4
Datasheet:
Bestirpower BCZ120N21M1
Products Specifications
Manufacturer:
Package:
TO-247-4
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
100A
RDS(on):
21mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
224pF
Input Capacitance(Ciss):
3.741nF
Pd - Power Dissipation:
469W
Gate Charge(Qg):
198nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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