AGMSEMI AGMH6035D
Manufacturer:
AGMSEMI
Asian Brands
Mfr. Part #:
AGMH6035D
Package:
TO-252
Customer #:
Description:
60V 125A 4.2mΩ@10V,20A 4V@250uA 1 N-channel 119W TO-252 Single FETs, MOSFETs RoHS
Datasheet:
AGMSEMI AGMH6035D
Products Specifications
Manufacturer:
Package:
TO-252
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Pd - Power Dissipation:
119W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
47nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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AGMSEMI
609 Products
AGMSEMI Core Control Electronic Technology Co., Ltd.
(hereinafter referred to as "AGM-Semi") is a leading designer and marketer of modern high-power semiconductor devices in China, specializing in the design, production, and marketing of a wide range of high-power semiconductor devices and power-integrated devices. AGM-Semi is based on independent innovation, owns independent intellectual property rights, and is committed to the "AGM-Semi" independent product brand. At present, the company specializes in the R&D, design, production, testing, quality assessment, sales, and service of super-junction MOSFETs, NPT-IGBT, and trench-type high-power MOS devices. AGM-Semi has established design and operation centers, sales companies, and outsourcing chip flow bases, finished product packaging bases, and finished product testing bases in mainland China and Hong Kong respectively, and has a perfect quality control assurance system to ensure the consistency and stability of product quality.
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