AGMSEMI AGM30P12D
Manufacturer:
AGMSEMI
Asian Brands
Mfr. Part #:
AGM30P12D
Package:
TO-252
Customer #:
Key Attributes:
MOSFET P-CH 30V 35A TO-252
Description:
P-Channel 30V 35A 3.6W Surface Mount TO-252
Datasheet:
AGMSEMI AGM30P12D
Products Specifications
Manufacturer:
Package:
TO-252
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
35A
RDS(on):
11mΩ@10V,15A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
1.2V
Number:
1 P-Channel
Pd - Power Dissipation:
3.6W
Gate Charge(Qg):
15nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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AGMSEMI
609 Products
AGMSEMI Core Control Electronic Technology Co., Ltd.
(hereinafter referred to as "AGM-Semi") is a leading designer and marketer of modern high-power semiconductor devices in China, specializing in the design, production, and marketing of a wide range of high-power semiconductor devices and power-integrated devices. AGM-Semi is based on independent innovation, owns independent intellectual property rights, and is committed to the "AGM-Semi" independent product brand. At present, the company specializes in the R&D, design, production, testing, quality assessment, sales, and service of super-junction MOSFETs, NPT-IGBT, and trench-type high-power MOS devices. AGM-Semi has established design and operation centers, sales companies, and outsourcing chip flow bases, finished product packaging bases, and finished product testing bases in mainland China and Hong Kong respectively, and has a perfect quality control assurance system to ensure the consistency and stability of product quality.
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