AGMSEMI AGM20T09AT
Manufacturer:
AGMSEMI
Asian Brands
Mfr. Part #:
AGM20T09AT
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 200V 110A TO-247
Description:
N-Channel 200V 110A 278W Through Hole TO-247
Datasheet:
AGMSEMI AGM20T09AT
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
200V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
389pF@100V
Number:
1 N-channel
Input Capacitance(Ciss):
10.656nF@100V
Pd - Power Dissipation:
278W
Gate Charge(Qg):
145nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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AGMSEMI
609 Products
AGMSEMI Core Control Electronic Technology Co., Ltd.
(hereinafter referred to as "AGM-Semi") is a leading designer and marketer of modern high-power semiconductor devices in China, specializing in the design, production, and marketing of a wide range of high-power semiconductor devices and power-integrated devices. AGM-Semi is based on independent innovation, owns independent intellectual property rights, and is committed to the "AGM-Semi" independent product brand. At present, the company specializes in the R&D, design, production, testing, quality assessment, sales, and service of super-junction MOSFETs, NPT-IGBT, and trench-type high-power MOS devices. AGM-Semi has established design and operation centers, sales companies, and outsourcing chip flow bases, finished product packaging bases, and finished product testing bases in mainland China and Hong Kong respectively, and has a perfect quality control assurance system to ensure the consistency and stability of product quality.
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