Transistor, Photovoltaic Output Optoisolators
Results:
234
Manufacturer
American Bright Optoelectronics Corporation
Amicc
BrtLed
Chau Light
Chipanalog
DAPENG
DDF
DIODES
Existar
Flip Electronics
GOODWORK
GREENMICRO
GUOXIN JIAPIN SEMICONDUCTOR
HVM Technology, Inc.
Infineon
Jiangsu JieJie Microelectronics
JTD
JUXING
Kingbright
Letex
Littelfuse
MICROCHIP
MICRONE
MSKSEMI
NATIONSTAR
NEC
Phoenix Contact
QNHCHIP
Senba Sensing Tech
Sensata
SEP
SILICON LABS
Socle Technology Corporation
STANDEXMEDER
SUPSiC
Taiwan Semiconductor
TDSEMIC
TE Connectivity
UTC
WEIDMULLER
Wuxi China Resources Huajing Microelectronics
XBLW
XCH
YONGYUTAI
ZHHXDZ
Package
4-DIP
DIP-4
DIP-8
Flatpack-8
LGA-8(10x12.5)
LSOP-4
SDIP-6
SMD
SMD-3P,6.5x4.6mm
SMD-4P
SMD-8P
SOIC-12
SOIC-16
SOIC-8
SOP-4
SOP-4-175mil-2.54mm
SOP-4-2.54mm
SOP-4-300mil-2.54mm
SOP-5
SOP-6-2.54mm
SSOP-4
Through Hole
-
Packaging
Voltage - Forward(Vf)
1.15V
1.1V
1.24V
1.25V
1.2V
1.35V
1.3V
1.45V
1.4V
1.6V
1V
2.9V
3.25V
4V
-
Rise time
12us
18us
18us@2mA,100Ω
2us
300us
3us
3us@2mA,100Ω
40us
4us
4us@2mA,100Ω
6us
6us@2mA,100Ω
-
Load Voltage
12V
16V
24V
25V
300V
30V
35V
50V
55V
5V
60V
70V
7V
8.3V
80V
85V
8V
9.6V
-
Load Type
Darlington Transistor
FET
Photodiode
Phototransistor
-
Current transfer ratio
-;-
-;100%
0.1%
100%;160%
100%;300%
100%;600%
1000%;-
1000%;4000%
130%;260%
130%;400%
15%
150%;50%
160%;80%
200%;100%
200%;350%
200%;400%
300%;120%
300%;20%
300%;600%
450%;300%
50%
50%;400%
50%;600%
600%;50%
80%;160%
80%;600%
Reverse Voltage
4V
5V
6V
9V
-
Pd - Power Dissipation
100mW
112mW
159mW
170mW
200mW
230mW
250mW
270mW
350mW
500mW
70mW
-
Vce Saturation(VCE(sat))
1.2V@100mA,10mA
100mV@10mA,1mA
100mV@1mA,20mA
100mV@20mA,1mA
100mV@2mA,5mA
150mV@20mA,1mA
200mV@10mA,1mA
200mV@1mA,20mA
200mV@20mA,1mA
250mV@2mA,5mA
300mV@100mA,10mA
300mV@10mA,1mA
300mV@10mA,2mA
300mV@1mA,10mA
400mV@20mA,20mA
400mV@8mA,2.4mA
60mV@20mA,1mA
-
Fall time
12us
15us
18us
220us
2us
3us
3us@2mA,100Ω
4us
5us
5us@2mA,100Ω
6us
8us
-
Output Current
100mA
100uA
10mA
14uA
150mA
1uA
20mA
2A
2mA
3mA
40mA
50mA
5uA
8mA
8uA
-
Output Type
Darlington Transistor
FET
Photodiode
Phototransistor
-
Number of Channels
1
2
-
Input type
AC,DC
AC;DC
DC
-
Forward Current(If)
16mA
20mA
25mA
360mA
3mA
40mA
50mA
60mA
Isolation Voltage(Vrms)
10kV
2.5kV
3.75kV
4kV
5.3kV
5kV
6kV
-
Operating Temperature
-10℃~+60℃
-25℃~+40℃
-25℃~+50℃
-25℃~+85℃
-30℃~+100℃
-30℃~+110℃
-30℃~+70℃
-40℃~+100℃
-40℃~+110℃
-40℃~+85℃
-55℃~+100℃
-55℃~+110℃
55℃~+105℃
55℃~+110℃
Features
Non-CTR dependent;No input-side power required
Not dependent on CTR
Not dependent on CTR;Output state determined
Input threshold current
-
Voltage - Supply
-
High Level Delay Time
800ns
CMTI(kV/us)
15kV/us
Low Level Delay Time
1.2us
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Results: 234
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Mpn |
Manufacturer |
Quantity |
Description |
Package |
Packaging |
Date Code |
Voltage - Forward(Vf) |
Rise time |
Load Voltage |
Load Type |
Current transfer ratio |
Reverse Voltage |
Pd - Power Dissipation |
Vce Saturation(VCE(sat)) |
Fall time |
Output Current |
Output Type |
Number of Channels |
Input type |
Forward Current(If) |
Isolation Voltage(Vrms) |
Operating Temperature |
Features |
Input threshold current |
Voltage - Supply |
High Level Delay Time |
CMTI(kV/us) |
Low Level Delay Time |
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DIP-4 Transistor, Photovoltaic Output Optoisolators RoHS |
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