Single IGBTs
Results:
1
Manufacturer
KTP
Package
TO-247
Packaging
Gate Charge(Qg)
266nC@40A,15V
Operating Temperature
-40℃~+175℃
Reverse Recovery Time(trr)
129ns
Td(off)
587ns
Pd - Power Dissipation
333W
Td(on)
108ns
Collector-Emitter Breakdown Voltage (Vces)
650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Switching Energy(Eoff)
1.23mJ
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Mpn |
Manufacturer |
Quantity |
Description |
Package |
Packaging |
Date Code |
Gate Charge(Qg) |
Operating Temperature |
Reverse Recovery Time(trr) |
Td(off) |
Pd - Power Dissipation |
Td(on) |
Collector-Emitter Breakdown Voltage (Vces) |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) |
Switching Energy(Eoff) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Full Reel: |
IGBT 650V 80A 333W Through Hole TO-247 |
TO-247 |
- |
266nC@40A,15V | -40℃~+175℃ | 129ns | 587ns | 333W | 108ns | 650V | 1.23mJ |
