Single IGBTs
Results:
1
Manufacturer
Jilin Sino-Microelectronics
Package
TO-220MF
Packaging
Collector-Emitter Breakdown Voltage (Vces)
650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
6.5V@250uA
Operating Temperature
-55℃~+150℃@(Tj)
Pd - Power Dissipation
31W
Switching Energy(Eoff)
-
Td(off)
-
Td(on)
-
IGBT Type
-
Input Capacitance(Cies)
880pF@25V
Reverse Recovery Time(trr)
-
Gate Charge(Qg)
-
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Mpn |
Manufacturer |
Quantity |
Description |
Package |
Packaging |
Date Code |
Collector-Emitter Breakdown Voltage (Vces) |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) |
Operating Temperature |
Pd - Power Dissipation |
Switching Energy(Eoff) |
Td(off) |
Td(on) |
IGBT Type |
Input Capacitance(Cies) |
Reverse Recovery Time(trr) |
Gate Charge(Qg) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Full Reel: |
31W 650V TO-220MF Single IGBTs RoHS |
TO-220MF |
- |
650V | 6.5V@250uA | -55℃~+150℃@(Tj) | 31W | - | - | - | - | 880pF@25V | - | - |
