Memory (ICs)

Results: 447
Manufacturer
SAMSUNG
Package
BGA
BGA-153
BGA-200
BGA-315
BGA-96
FBGA
FBGA-106
FBGA-153
FBGA-153(10x11)
FBGA-153(11.5x13)
FBGA-170
FBGA-178
FBGA-180
FBGA-200
FBGA-200(15x10)
FBGA-221
FBGA-253
FBGA-254
FBGA-256
FBGA-315
FBGA-376
FBGA-432
FBGA-496
FBGA-556
FBGA-60
FBGA-78
FBGA-84
FBGA-96
FBGA-96(7.5x13.3)
SMD
TFBGA-200
TSOP
TSOP-54-10.2mm
TSOP-66-10.2mm
TSOPI-48
-
Packaging
Memory Format
128Mx16
1Gx16
1Gx8
256M x 32
256Mx16
256Mx32
256Mx8
2Gx8
512M x 32
512Mx16
DDR SDRAM
DDR2 SDRAM
DDR3 SDRAM
DDR3L SDRAM
DDR4 SDRAM
DDR4 SDRAM
DDR5 SDRAM
GDDR6 SGRAM
LPDDR3 SDRAM
LPDDR4 SDRAM
LPDDR4X SDRAM
x32
x64
-
Voltage - Supply
1.067V~1.166V
1.06V~1.17V
1.06V~1.17V;1.7V~1.95V
1.14V~1.26V
1.14V~1.3V
1.1V
1.283V~1.45V
1.28V~1.575V
1.2V
1.35V
1.35V;1.25V
1.425V~1.575V
1.5V
1.7V~1.95V
1.7V~1.95V;1.06V~1.17V
1.7V~1.9V
1.8V;1.05V;900mV;500mV
1.8V;1.1V
1.8V;1.1V;600mV
1.8V;1.2V
1.8V;3.3V
2.3V~2.7V
2.7V~3.6V
3V~3.6V
4.5V~5.5V
570mV~650mV
570mV~650mV;1.06V~1.17V;1.7V~1.95V
Interface
eMMC 5.1
-
Operating temperature
-25℃~+85℃
-40℃~+105℃
-40℃~+120℃
-40℃~+125℃
-40℃~+85℃
-40℃~+90℃
-40℃~+95℃
0℃~+70℃
0℃~+85℃
0℃~+95℃
-
Data Retention - TDR (Year)
-
Memory Size
128Mbit
1Gbit
1Mbit
2Gbit
512Mbit
Clock Frequency
1.066GHz
1.2GHz
1.333GHz
1.6GHz
1.8665GHz
1.866GHz
2.133GHz
200MHz
533MHz
930MHz
933MHz
-
Current - Supply
50mA
Page Programming Time (Tpp)
-
NAND Operating Voltage (VCCF)
1.8V;3.3V
2.7V~3.6V
-
Refresh Current
13mA
1mA;2.7mA;400uA
20mA
2mA
2mA;3mA
3mA
4mA
8mA
-
Write Cycle Time(tWC)
-
Access Time
-
Controller Stand-By Current
-
Writing Speed in Sequence
100MB/S
19MB/S
200MB/S
40MB/S
50MB/S
-
configuration
MLC
SLC
-
Reading Speed in Sequence
300MB/S
320MB/S
325MB/S
330MB/S
-
Program / Erase Cycles
-
Standby Supply Current
10uA
Block Erase Time(tBE)
-
NAND Stand-By Current
-
×
Product
Reset All Results: 447
Mpn
Manufacturer
Quantity
Description
Package
Packaging
Date Code
Memory Format
Voltage - Supply
Interface
Operating temperature
Data Retention - TDR (Year)
Memory Size
Clock Frequency
Current - Supply
Page Programming Time (Tpp)
NAND Operating Voltage (VCCF)
Refresh Current
Write Cycle Time(tWC)
Access Time
Controller Stand-By Current
Writing Speed in Sequence
configuration
Reading Speed in Sequence
Program / Erase Cycles
Standby Supply Current
Block Erase Time(tBE)
NAND Stand-By Current
Full Reel:
Memory (ICs) RoHS
-
-
Full Reel:
8GB Memory (ICs) RoHS
-
-
-
-40℃~+105℃
8GB
-
-
-
-
-
-
Full Reel:
Memory (ICs) RoHS
-
-
Full Reel:
Memory (ICs) RoHS
-
-
Full Reel:
8Gbit 1.2V 3.2GHz DDR4 SDRAM BGA-96 Memory (ICs) RoHS
BGA-96
-
DDR4 SDRAM
1.2V
0℃~+85℃
8Gbit
3.2GHz
42mA
20mA
Full Reel:
TSOPI-48 Memory (ICs) RoHS
TSOPI-48
-
Full Reel:
2.7V~3.6V 32Gbit TSOPI-48 Memory (ICs) RoHS
TSOPI-48
-
2.7V~3.6V
-
-
-
32Gbit
-
-
-
-
10uA
-
Full Reel:
2.3V~2.7V 128Mbit 200MHz DDR SDRAM TSOP-66-10.2mm Memory (ICs) RoHS
TSOP-66-10.2mm
-
DDR SDRAM
2.3V~2.7V
0℃~+70℃
128Mbit
200MHz
110mA
3mA
Full Reel:
4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96(7.5x13.3) Memory (ICs) RoHS
FBGA-96(7.5x13.3)
-
DDR3 SDRAM
1.425V~1.575V
0℃~+95℃
4Gbit
1.066GHz
55mA
2mA
Full Reel:
1.7V~1.95V 8Gbit 933MHz LPDDR3 SDRAM FBGA-178 Memory (ICs) RoHS
FBGA-178
-
LPDDR3 SDRAM
1.7V~1.95V
-25℃~+85℃
8Gbit
933MHz
-
-
Full Reel:
FBGA-178 Memory (ICs) RoHS
FBGA-178
-
Full Reel:
16Gbit 1.7V~1.95V 1.066GHz LPDDR3 SDRAM FBGA-178 Memory (ICs) RoHS
FBGA-178
-
LPDDR3 SDRAM
1.7V~1.95V
-25℃~+85℃
16Gbit
1.066GHz
-
-
Full Reel:
16Gbit x32 LPDDR4 TFBGA-200 Memory (ICs) RoHS
TFBGA-200
-
x32
1.8V;1.1V
LPDDR4
-25℃~+85℃
16Gbit
Full Reel:
16Gbit x32 LPDDR4 SMD Memory (ICs) RoHS
SMD
-
x32
1.8V;1.1V
LPDDR4
-25℃~+85℃
16Gbit
Full Reel:
SMD Memory (ICs) RoHS
SMD
-
Full Reel:
SMD Memory (ICs) RoHS
SMD
-
Full Reel:
SMD Memory (ICs) RoHS
SMD
-
Full Reel:
SMD Memory (ICs) RoHS
SMD
-
Full Reel:
SMD Memory (ICs) RoHS
SMD
-
Full Reel:
SMD Memory (ICs) RoHS
SMD
-
ShowingOf 447