Single FETs, MOSFETs
Results:
3
Manufacturer
Tagore Technology
Package
-
Packaging
Gate Threshold Voltage (Vgs(th))
1.7V
-
Number
2 N-Channel
-
Output Capacitance(Coss)
9pF
-
Pd - Power Dissipation
-
Ciss-Input Capacitance
28pF
-
RDS(on)
180mΩ
360mΩ
90mΩ
Operating Temperature -
-55℃~+150℃
-
Gate Charge(Qg)
0.75nC
-
Type
N-Channel
-
Drain to Source Voltage
650V
Reverse Transfer Capacitance (Crss@Vds)
0.16pF
-
×
![Product]()
Reset All
Results: 3
Showing
1 - 3
Of 3
|
|
Mpn |
Manufacturer |
Quantity |
Description |
Package |
Packaging |
Date Code |
Gate Threshold Voltage (Vgs(th)) |
Number |
Output Capacitance(Coss) |
Pd - Power Dissipation |
Ciss-Input Capacitance |
RDS(on) |
Operating Temperature - |
Gate Charge(Qg) |
Type |
Drain to Source Voltage |
Reverse Transfer Capacitance (Crss@Vds) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Full Reel: |
Single FETs, MOSFETs RoHS |
- |
- |
||||||||||||||
|
|
Full Reel: |
Single FETs, MOSFETs RoHS |
- |
- |
||||||||||||||
|
|
Full Reel: |
Single FETs, MOSFETs RoHS |
- |
- |
