Single FETs, MOSFETs
Results:
1
Manufacturer
Sine Microelectronics
Package
TO-252-2
Packaging
Gate Threshold Voltage (Vgs(th))
2.5V
Number
1 P-Channel
Reverse Transfer Capacitance (Crss@Vds)
141pF
Gate Charge(Qg)
25nC@4.5V
Pd - Power Dissipation
52.1W
RDS(on)
25mΩ@10V
25mΩ@10V,18A
Ciss-Input Capacitance
3.635nF
Current - Continuous Drain(Id)
35A
Drain to Source Voltage
60V
Operating Temperature -
-55℃~+150℃
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Mpn |
Manufacturer |
Quantity |
Description |
Package |
Packaging |
Date Code |
Gate Threshold Voltage (Vgs(th)) |
Number |
Reverse Transfer Capacitance (Crss@Vds) |
Gate Charge(Qg) |
Pd - Power Dissipation |
RDS(on) |
Ciss-Input Capacitance |
Current - Continuous Drain(Id) |
Drain to Source Voltage |
Operating Temperature - |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Full Reel: |
60V 35A 25mΩ@10V,18A 2.5V 1 P-Channel 52.1W TO-252-2 Single FETs, MOSFETs RoHS |
TO-252-2 |
- |
2.5V | 1 P-Channel | 141pF@15V | 25nC@4.5V | 52.1W | 25mΩ@10V,18A | 35A | 60V | -55℃~+150℃ |
