Single FETs, MOSFETs

Results: 2
Manufacturer
EIC
Package
SOT-23
Packaging
Pd - Power Dissipation
350mW
700mW
Gate Threshold Voltage (Vgs(th))
2.5V
950mV
Type
N-Channel
P-Channel
Drain to Source Voltage
20V
60V
Output Capacitance(Coss)
25pF
95pF
Ciss-Input Capacitance
375pF
50pF
Current - Continuous Drain(Id)
2.9A
300mA
Number
1 N-channel
1 P-Channel
Operating Temperature -
-55℃~+150℃
RDS(on)
150mΩ@2.5V
2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)
5pF
65pF
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Product
Reset All Results: 2
Mpn
Manufacturer
Quantity
Description
Package
Packaging
Date Code
Pd - Power Dissipation
Gate Threshold Voltage (Vgs(th))
Type
Drain to Source Voltage
Output Capacitance(Coss)
Ciss-Input Capacitance
Current - Continuous Drain(Id)
Number
Operating Temperature -
RDS(on)
Gate Charge(Qg)
Reverse Transfer Capacitance (Crss@Vds)
RoHS
Full Reel:
60V 300mA 2Ω@10V 2.5V@1mA 1 N-channel 350mW SOT-23 Single FETs, MOSFETs RoHS
SOT-23
-
350mW
2.5V@1mA
N-Channel
60V
25pF
300mA
1 N-channel
-55℃~+150℃
2Ω@10V
5pF
RoHS
Full Reel:
P-Channel 20V 2.9A 0.7W Surface Mount SOT-23
SOT-23
-
700mW
950mV@250uA
P-Channel
20V
95pF
2.9A
-55℃~+150℃
150mΩ@2.5V
65pF